Messages in this thread | | | Subject | Re: [PATCH v9 5/5] nvmem: eeprom: add documentation of sysfs fram and sernum file | From | Jiří Prchal <> | Date | Fri, 11 Jun 2021 11:01:57 +0200 |
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On 11. 06. 21 10:53, Greg Kroah-Hartman wrote: > On Fri, Jun 11, 2021 at 07:26:52AM +0200, Jiri Prchal wrote: >> +Description: >> + Contains the FRAM binary data. Same as EEPROM, just another file >> + name to indicate that it employs ferroelectric process. >> + It performs write operations at bus speed - no write delays, capable >> + of 10^14 read/write cycles and 151 years data retention. > > Are you sure of these statistics? Don't promise something here that > might not be true, this is not a marketing document :)
Just copied from datasheet. Is write at bus speed OK? And about others: much more then EEPROM would be OK? Or don't write about it?
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