Messages in this thread | | | From | Chen-Yu Tsai <> | Date | Mon, 18 Mar 2019 16:45:19 +0800 | Subject | Re: [PATCH 4/6] nvmem: sunxi_sid: Read out data in native format |
| |
On Mon, Mar 18, 2019 at 4:42 PM Maxime Ripard <maxime.ripard@bootlin.com> wrote: > > Hi, > > On Mon, Mar 18, 2019 at 03:33:52PM +0800, Chen-Yu Tsai wrote: > > From: Chen-Yu Tsai <wens@csie.org> > > > > Originally the SID e-fuses were thought to be in big-endian format. > > Later sources show that they are in fact native or little-endian. > > The most compelling evidence is the thermal sensor calibration data, > > which is a set of one to three 16-bit values. In native-endian they > > are in 16-bit cells with increasing offsets, whereas with big-endian > > they are in the wrong order, and a gap with no data will show if there > > are one or three cells. > > > > Switch to a native endian representation for the nvmem device. For the > > H3, the register read-out method was already returning data in native > > endian. This only affects the other SoCs. > > > > Signed-off-by: Chen-Yu Tsai <wens@csie.org> > > I thought only the newer SoCs were impacted by this issue?
It is noticable on the newer SoCs. The old ones only have the 128-bit SID, which could be read either way, as AFAIK it's just a serial number.
If you think we should leave the old ones alone I can factor that in.
ChenYu
| |