Messages in this thread | | | Subject | Re: [PATCH V3 1/3] mtd: add new fields to nand_flash_dev{} | From | Artem Bityutskiy <> | Date | Sat, 02 Mar 2013 16:19:32 +0200 |
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On Mon, 2013-01-28 at 12:57 +0800, Huang Shijie wrote: > As time goes on, we begin to meet the situation that we can not get enough > information from some nand chips's id data. Take some Toshiba's nand chips > for example. I have 4 Toshiba's nand chips in my hand: > TC58NVG2S0F, TC58NVG3S0F, TC58NVG5D2, TC58NVG6D2 > > When we read these chips' datasheets, we will get the geometry of these chips: > TC58NVG2S0F : 4096 + 224 > TC58NVG3S0F : 4096 + 232 > TC58NVG5D2 : 8192 + 640 > TC58NVG6D2 : 8192 + 640 > > But we can not parse out the correct oob size for these chips from the id data.
Very good start of the commit message - you clearly defined the problem.
> So it is time to add some new fields to the nand_flash_dev{}, and update the > detection mechanisms.
But continued with very poor description of how you address the problem. Please, provide a better description.
> This patch just adds some new fields to the nand_flash_dev{}: > @id[8] : the 8 bytes id data.
id[8] = 8 bytes id data, just like password[5] = 5 bytes of password data. Please, provide a better commentary.
> @id_len: the valid length of the id data.
What does "valid" mean? Are "invalid" parts?
> @oobsize: the oob size.
Try to invent a better comment.
Huang, it is not that I am trying to be difficult, but I truly do not understand how you are solving the issue.
-- Best Regards, Artem Bityutskiy
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