Messages in this thread | | | From | Sergei Organov <> | Subject | Re: o_sync in vfat driver | Date | Tue, 28 Feb 2006 16:52:29 +0300 |
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"linux-os \(Dick Johnson\)" <linux-os@analogic.com> writes: > On Mon, 27 Feb 2006 col-pepper@piments.com wrote: > >> On Mon, 27 Feb 2006 22:32:07 +0100, linux-os (Dick Johnson) >> <linux-os@analogic.com> wrote: >> [...] > It takes about a second to erase a 64k physical sector. This is > a required operation before it is written. > Since the projected life of these new devices is about 5 to 10 million > such cycles, (older NAND flash used in modems was only 100-200k) the > writer would have to be running that "brand new device" for at least 5 > million seconds. Let's see:
What FLASH are you talking about? I work with NAND FLASH chips directly in embedded projects, and for both Toshiba and Samsung NAND FLASH the erase time of 128Kb (64K words) block is 2 milliseconds typical. Page program time is 0.3 milliseconds typical, so, having 64 pages per block, total erase-write block cycle is about 22ms.
Those chips indeed support about 100K program/erase cycles. Well, maybe there are some new NAND FLASH chips that support more program/erase cycles (just checked Samsung but found none), but I doubt they are 1000 times slower for block erase anyway.
-- Sergei.
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